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Product Detailed Parameters
- Description：TRANS 2NPN 40V 600MA TO-78-6
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：600mA
- Voltage - Collector Emitter Breakdown (Max)：40V
- Vce Saturation (Max) @ Ib, Ic：900mV @ 30mA, 300mA
- Current - Collector Cutoff (Max)：10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 150mA, 10V
- Power - Max：500mW
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C
- Mounting Type：Through Hole
- Package / Case：TO-78-6 Metal Can
- Supplier Device Package：TO-78-6
- Grade：-
- Qualification：-
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Overview
The 2N5793 is an NPN silicon power bipolar junction transistor (BJT) manufactured by Microchip Technology. It is designed for high-power switching and amplification applications, featuring a collector-emitter voltage rating of 400V and a continuous collector current capacity of 1A. The device operates with a maximum power dissipation of 80W when mounted on a case, ensuring reliable performance in demanding environments. It supports a wide operating temperature range from -65°C to +200°C, making it suitable for military and aerospace standards.
Feature Summary
- High voltage capability for robust power switching
- Extended thermal stability for extreme environments
- Silicon construction for durability
Applications
- Military-grade power switching circuits
- Aerospace amplifier stages
- High-voltage industrial control systems
Procurement Notes
Verify the specific suffix designation (e.g., JANTX, MIL) against the required qualification standard, as these determine compliance levels. Confirm package type availability matches the design requirements. Check for RoHS status if applicable to the project constraints. Ensure the supplier provides traceability documentation for critical applications.
Selection Notes
Select this component when high breakdown voltage and extended temperature operation are required. Evaluate thermal management needs carefully due to the 80W dissipation rating. Compare alternative NPN power transistors with similar Vceo and Ic ratings. Consider the package style for mounting compatibility within the target chassis or PCB layout.
Part Context
This part belongs to the family of high-reliability silicon NPN power transistors produced by Microchip. These devices are typically utilized in ruggedized electronics where standard commercial parts would fail. The 2N5793 serves as a discrete solution for power handling tasks that exceed the capabilities of small-signal transistors.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided data. Verify pinout compatibility and electrical parameters before considering any generic NPN power BJT replacements.
