2N6027 TRA TIN/LEAD

Overview

The Central Semiconductor Corp 2N6027 TRA TIN/LEAD is a silicon programmable unijunction transistor (PUJT) housed in a TO-92-3 through-hole package. It features a maximum collector-emitter voltage of 40V, a power dissipation rating of 300mW, and an operating temperature range from -50°C to +100°C.

Feature Summary

• Engineers can program intrinsic stand-off ratio, peak current, valley current, and interbase resistance by selecting external resistor values.
• Features low on-state voltage for efficient triggering applications.
• Includes an anode gate terminal enabling special thyristor control functions.

Applications

• Thyristor trigger circuits
• Oscillator designs
• Pulse generation circuits
• Timing circuit implementations

Procurement Notes

Verify the specific suffix 'TRA' against the manufacturer's official documentation to confirm lead-free status or tape-and-reel packaging variations. Confirm RoHS compliance details directly with Central Semiconductor Corp as tin/lead designations may vary by production batch.

Selection Notes

Select this component when precise programming of UJT characteristics is required without custom fabrication. The TO-92 package suits high-volume automatic insertion equipment. Ensure the 300mW power dissipation meets the thermal requirements of the target application environment.

Part Context

This device belongs to the 2N6027 series of programmable unijunction transistors manufactured by Central Semiconductor Corp. It serves as a discrete semiconductor solution for timing and pulse applications where adjustable electrical parameters are necessary for circuit optimization.

Replacement Considerations

Public confirmed substitute part numbers: 2N6027G, 2N6028 APM PBFREE.