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The 2N6027 TRE TIN/LEAD is a programmable unijunction transistor manufactured by Central Semiconductor Corp. It utilizes silicon technology and is housed in a TO-92-3 through-hole package. The device supports a single configuration with a maximum power dissipation of 300 mW. It operates within a temperature range of -55°C to +100°C. Key electrical characteristics include a base one voltage (Vgkf) of 40 V, a base two voltage (Vgkr) of 5.0 V, and a valley current parameter (Vgar) of 40 V.
Verify that the specific ordering suffix matches the required lead plating finish, as tin/lead and lead-free variants are distinct. Confirm the package style corresponds to the through-hole requirement. Ensure the manufacturer designation aligns with Central Semiconductor Corp specifications before finalizing procurement orders.
Select this component when a programmable unijunction transistor with a 40 V base one voltage is required. Consider the 300 mW power dissipation limit and the -55°C to +100°C operating temperature range. Verify compatibility with through-hole assembly processes and ensure the TO-92-3 footprint fits the design constraints.
This part belongs to the 2N6027 series of programmable unijunction transistors from Central Semiconductor Corp. These devices are silicon-based discrete semiconductors designed for switching and timing functions. The series includes variations such as the PBFREE version, maintaining consistent electrical performance across different plating options.
The 2N6027 APM PBFREE is documented as a parameter-equivalent alternative. Verify that the lead-free specification meets environmental requirements and that the electrical parameters remain identical for direct substitution.