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The onsemi 2N6071BT is a silicon bidirectional thyristor (Triac) from the 2N6071A/B Series, designed for full-wave AC control applications. It features sensitive gate triggering compatible with TTL, HTL, CMOS, and operational amplifier logic functions. The device operates in four quadrants with peak repetitive off-state voltages up to 600 V and an on-state RMS current of 4.0 A at TC = 85°C. It utilizes a TO-225 package (CASE 077 STYLE 5) with thermopad construction for low thermal resistance (RθJC = 3.5 °C/W). The 'T' suffix indicates tube packaging, while 'B' denotes specific gate trigger current characteristics optimized for certain logic families.
Verify the ordering suffix carefully. The 'T' suffix specifies tube packaging, distinct from bulk box or tape-and-reel options. Confirm the 'B' variant matches the required gate trigger current specifications for the target logic interface. Ensure the Pb-free status aligns with assembly requirements if applicable.
Select the 2N6071BT when sensitive gate triggering is required for direct interfacing with digital logic circuits. The B-series variant offers lower gate trigger currents compared to the A-series, making it suitable for CMOS buffer and NAND configurations. Evaluate thermal management needs based on the 4.0 A RMS rating and junction-to-case thermal resistance.
This component belongs to the 2N6071A/B Series of sensitive gate Triacs manufactured by onsemi. The series includes variants with different blocking voltage ratings (200 V, 400 V, 600 V) and gate sensitivity levels (A and B types). The 2N6071 model specifically supports up to 200 V blocking voltage.
Direct substitutes within the same family include 2N6071AT (tube, A-series) or 2N6071AG/2N6071BTG (Pb-free versions). Cross-family replacements require matching TO-225 package dimensions, 4.0 A RMS current rating, and compatible gate trigger characteristics.