2N6073 PBFREE

Overview

The 2N6073 PBFREE is a silicon N-channel power MOSFET manufactured by Central Semiconductor Corp. It features an 80V drain-source breakdown voltage and supports a continuous drain current of 15A. The device utilizes TO-220AB through-hole packaging with a maximum power dissipation rating of 125W at 25°C case temperature. Key electrical characteristics include a gate threshold voltage ranging from 2V to 4V and a maximum on-resistance of 0.075Ω at a gate drive of 10V. The component operates within a junction temperature range of -55°C to +175°C and complies with RoHS standards.

Feature Summary

• High-current capability suitable for power switching applications
• Low on-resistance for efficient conduction
• Wide operating temperature range for robust performance

Applications

• DC motor control circuits
• Power supply output stages
• Load switching applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official datasheet to confirm pinout configuration and thermal pad specifications. Ensure that the procurement channel provides valid traceability documentation. Confirm compliance requirements such as RoHS status directly with the supplier before finalizing orders.

Selection Notes

Select this component when designing circuits requiring moderate voltage handling and high current capacity in a standard through-hole package. Evaluate the thermal management requirements carefully, as the 125W rating assumes adequate heatsinking. Compare the on-resistance and gate charge parameters against alternative MOSFETs to ensure compatibility with the intended driver circuitry.

Part Context

This part belongs to the 2N60xx series of N-channel power MOSFETs produced by Central Semiconductor Corp. These devices are designed for general-purpose power switching tasks. The 2N6073 variant specifically offers a balance between voltage rating and current handling, making it a common choice for industrial and consumer electronics power stages.

Replacement Considerations

Cross-reference with other 2N6073 variants or equivalent N-channel MOSFETs offering 80V/15A ratings. Verify that substitute components match the TO-220AB footprint and have compatible electrical parameters, particularly Rds(on) and Vgs(th), to ensure direct interchangeability without circuit redesign.