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The onsemi 2N6073A is a silicon bidirectional thyristor (TRIAC) designed for full-wave AC control applications. It features sensitive gate triggering compatible with TTL, HTL, CMOS, and operational amplifier logic functions. The device supports a peak repetitive off-state voltage of 400 V and an on-state RMS current of 4.0 A at a case temperature of 85°C. Key electrical parameters include a maximum gate trigger voltage of 2.5 V, a holding current of 15 mA, and a peak non-repetitive surge current of 30 A. It operates within a junction temperature range of -40°C to +110°C and utilizes a TO-225AA (TO-126) through-hole package.
Verify component authenticity by checking manufacturer markings against the official data sheet diagram. Confirm the specific suffix indicates the intended packaging format, as ordering options vary between bulk boxes and tubes. Ensure compliance with RoHS requirements if lead-free versions are mandated for the assembly process.
Select this TRIAC when a 400 V blocking voltage and 4 A continuous current rating align with the load requirements. The sensitive gate characteristic makes it suitable for low-power microcontroller or logic IC interfaces. Evaluate thermal management needs based on the junction-to-case thermal resistance and expected RMS current derating curves.
The 2N6073A belongs to the 2N6071A/B Series of sensitive gate TRIACs manufactured by onsemi. This series includes variants with different voltage ratings, such as the 2N6071A (200 V) and 2N6075A (600 V), sharing similar physical packages and gate sensitivity characteristics for standardized AC power control designs.
Compatible substitutes within the same family include the 2N6073B, which shares identical electrical ratings but may differ in gate trigger current specifications. Verify pinout compatibility and thermal resistance values before substituting.