2N6282

2N6282

$45.27
  • Description:TRANS NPN DARL 60V 20A DIE
  • Series:-

SKU:fb10588826f9 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN DARL 60V 20A DIE
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):20 A
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Vce Saturation (Max) @ Ib, Ic:3V @ 200mA, 20A
  • Current - Collector Cutoff (Max):1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 10A, 3V
  • Power - Max:160 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:Die
  • Supplier Device Package:Die

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2N6282

Overview

The Microchip Technology 2N6282 is a single NPN Darlington bipolar junction transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 60 V and a continuous collector current rating of 20 A. The device dissipates up to 160 W of power with a thermal resistance from junction to case of 1.09 °C/W. Operating and storage temperatures range from -65 °C to +200 °C, supporting high-temperature environments.

Feature Summary

  • High DC current gain typical value of 2400 at 10 A collector current
  • Surface mount die package configuration
  • Designed for general-purpose amplifier and low-frequency switching applications

Applications

  • General-purpose amplifier circuits
  • Low-frequency switching applications
  • Power control systems requiring high current gain

Procurement Notes

Verify the specific manufacturer source when ordering, as this part number appears in catalogs from multiple vendors including Microchip Technology and ON Semiconductor. Confirm that the datasheet specifications match your design requirements, particularly regarding the 60 V voltage rating and 20 A current capacity. Ensure the surface mount die package format is compatible with your assembly process.

Selection Notes

Select this component for designs requiring high current amplification in a compact surface mount form factor. The 160 W power dissipation capability supports robust performance in power management tasks. Consider the 1.09 °C/W thermal resistance for heat sink or board layout planning. Verify compatibility with low-frequency signal processing needs due to the 4 MHz transition frequency limit.

Part Context

This component belongs to the family of NPN Darlington silicon power transistors. It is often grouped with complementary PNP variants such as the 2N6285 series. The device serves as a discrete semiconductor solution for bridging low-power control signals to high-power loads in industrial and consumer electronics.

Replacement Considerations

Public confirmed substitute part numbers include the 2N6283, 2N6284, 2N6285, 2N6286, and 2N6287. These devices share similar Darlington configurations and electrical characteristics within the same product family.

2N62822N6282
$45.27
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