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The 2N6340 is a high-power NPN bipolar junction transistor (BJT) manufactured by Microchip Technology. It features a maximum collector-emitter voltage of 140 V and a continuous collector current rating of 20 A. The device is housed in a TO-204AA (TO-3) through-hole package, suitable for robust industrial applications. Key electrical characteristics include a DC current gain (hFE) of at least 25 when tested at 5 A and 2 V, and a transition frequency of 2 MHz. The maximum power dissipation is rated at 250 W, with an operating junction temperature range spanning from -65°C to +200°C.
Verify the manufacturer marking on the component casing to confirm it originates from Microchip Technology rather than other producers such as onsemi, which also manufacture this part number. Ensure the specific ordering suffix matches your packaging requirements. Cross-reference the datasheet revision date to ensure compatibility with your design specifications before finalizing procurement orders.
Select this component for designs requiring high current switching or amplification where thermal management is critical due to the TO-3 package. Consider the 140 V breakdown voltage limit when designing for higher voltage rails. Evaluate the hFE variation across the specified current range to ensure adequate drive capability for the base circuit under varying load conditions.
This component belongs to the family of general-purpose high-power NPN transistors. It serves as a discrete semiconductor solution for power electronics, distinct from integrated circuits. The TO-3 package provides a large metal tab for mounting to heatsinks, distinguishing it from smaller plastic-packaged alternatives used in lower-power consumer electronics.
Publicly confirmed substitute part numbers include MJ15003G and 2N6338. Verify pinout compatibility and thermal resistance values when substituting these equivalents to ensure the replacement meets the original design's power dissipation and physical mounting constraints.