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Product Detailed Parameters
- Description：THYRISTOR TRIAC 12A 600V TO220AB
- Series：-
- Mfr：onsemi
- Package：Bulk
- Triac Type：Standard
- Voltage - Off State：600 V
- Current - On State (It (RMS)) (Max)：12:00 AM
- Voltage - Gate Trigger (Vgt) (Max)：2 V
- Current - Non Rep. Surge 50, 60Hz (Itsm)：100A @ 60Hz
- Current - Gate Trigger (Igt) (Max)：50 mA
- Current - Hold (Ih) (Max)：40 mA
- Configuration：Single
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The onsemi 2N6348A is a silicon bidirectional thyristor (Triac) designed for full-wave AC control applications. It features an 800 V peak repetitive off-state voltage and supports 12 A RMS on-state current at a case temperature of +80°C, or 6.0 A at +95°C. The device utilizes a rugged TO-220AB (Case 221A) package with thermowatt construction for low thermal resistance. Key electrical characteristics include a peak on-state voltage of 1.75 V and guaranteed gate triggering across all four quadrants. Operating junction temperatures range from -40°C to +125°C.
Feature Summary
- Designed primarily for full-wave AC control applications such as light dimmers, motor controls, heating controls, and power supplies.
- Features diffused and glass passivated junctions to ensure greater parameter uniformity and stability.
- Small, rugged, thermowatt construction provides low thermal resistance, high heat dissipation, and durability.
- Gate triggering is guaranteed in all four quadrants for versatile switching capabilities.
Applications
- Light dimmers
- Motor controls
- Heating controls
- Power supplies
Procurement Notes
Verify the specific ordering suffix when purchasing. The 'G' suffix indicates a Pb-Free package, while the absence of the suffix denotes standard packaging. Confirm the assembly location and production week codes if traceability is required. Ensure the component matches the exact datasheet revision to guarantee compatibility with design specifications.
Selection Notes
Select the 2N6348A over the 2N6344A when higher blocking voltage is required, as it offers 800 V compared to 600 V. Consider the 2N6349A if the maximum 800 V rating is needed alongside specific gate trigger variations. Evaluate the thermal derating curves to ensure the RMS current capacity meets the application's continuous load requirements at the expected case temperature.
Part Context
The 2N6348A belongs to the 2N634xA family of preferred devices from onsemi, which also includes the 2N6344A and 2N6349A. These silicon bidirectional thyristors share the same TO-220AB package and general structural features but differ in their peak repetitive off-state voltage ratings and specific gate trigger characteristics.
Replacement Considerations
Direct substitutes within the same series include the 2N6344A (600 V rating) and the 2N6349A (800 V rating). Verify that the replacement device's peak repetitive off-state voltage and on-state current ratings meet or exceed the original circuit requirements before implementation.
FAQ
What is the peak repetitive off-state voltage for the 2N6348A?
The 2N6348A has a peak repetitive off-state voltage (VDRM/VRRM) of 800 V.
Is gate triggering guaranteed in all operating quadrants?
Yes, the datasheet specifies that gate triggering is guaranteed in all four quadrants.
What is the thermal resistance from junction to case?
The thermal resistance from junction to case (RθJC) is 2.0 °C/W.
