2N696

Single Bipolar Transistors Overview

The Microchip Technology 2N696 is a silicon NPN power bipolar junction transistor (BJT) designed for through-hole mounting in TO-5-3 packages. It features a collector-emitter voltage of 40 V, a collector-base voltage of 60 V, and an emitter-base voltage of 5 V. The device dissipates up to 600 mW with a maximum operating temperature of +200 C. DC current gain ranges from 20 to 60 at 150 mA and 10 VDC, while the collector-emitter saturation voltage is specified at 1.5 V.

Single Bipolar Transistors Feature Summary

• High thermal stability with a maximum operating temperature of +200 C
• Robust voltage ratings including 60 V collector-base capability
• Single NPN configuration optimized for power applications

Single Bipolar Transistors Applications

• General-purpose power switching circuits
• Amplifier stages requiring high thermal endurance
• Industrial control systems utilizing through-hole mounting

Single Bipolar Transistors Procurement Notes

Verify the specific revision level and manufacturing date code against the official datasheet before integration. Confirm that the TO-5-3 package dimensions align with your PCB or chassis layout requirements. Ensure that the thermal management design accommodates the 600 mW dissipation limit at elevated ambient temperatures up to +200 C. Cross-reference the hFE binning specifications if precise gain matching is required for your circuit design.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN BJT with high-temperature tolerance is required. The TO-5-3 metal can package provides superior heat dissipation compared to plastic alternatives. Consider the 40 V VCEO rating for low-voltage power applications. Verify that the 600 mW power dissipation meets the thermal budget of the target environment without excessive heatsinking.

Single Bipolar Transistors Part Context

The 2N696 belongs to Microchip's legacy discrete semiconductor portfolio, specifically within the bipolar transistor category. It serves as a ruggedized option for environments where standard plastic-packaged transistors may fail due to thermal stress. The part is manufactured using silicon technology and is intended for applications demanding reliability over high-frequency performance.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides for equivalent NPN power BJTs in TO-5 packages. Verify pinout compatibility and electrical parameter margins before replacing the original component. No direct substitute part numbers are confirmed in public documentation.