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The MCC 2N7000-AP is a single N-channel enhancement mode MOSFET designed for small-signal switching applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 75mA at 25°C. The device utilizes a high-density cell design to achieve low on-resistance, with a maximum value of 10 ohms at VGS=10V and ID=500mA. It operates within a junction temperature range of -55°C to 150°C and is housed in a TO-92 package.
Verify the specific ordering suffix to confirm packaging type, as the -AP suffix denotes ammo packing while other suffixes indicate bulk or reel configurations. Ensure compliance with halogen-free requirements by checking for the additional -HF suffix if specified in the bill of materials. Confirm authenticity through authorized distributors to avoid counterfeit components.
Select this component for low-current DC switching tasks requiring a robust TO-92 form factor. Evaluate the 10-ohm on-resistance limit against circuit power dissipation constraints. Consider the 75mA continuous current rating for load compatibility. Verify thermal management needs given the 625mW total power dissipation capability.
This part belongs to the standard 2N7000 series of N-channel MOSFETs manufactured by Micro Commercial Components. It serves as a direct replacement for generic 2N7000 devices in legacy designs. The component is widely used in consumer electronics and industrial control boards where cost-effective discrete switching is required.
Direct substitutes include ON Semiconductor 2N7000LT1G and STMicroelectronics 2N7002 variants, provided pinout and electrical ratings match the application requirements.