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The Nexperia 2N7002AKW-Q is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It operates within a 60 V drain-source voltage range and supports a continuous drain current of 220 mA at 25 °C. The device features a typical on-state resistance of 2.2 Ω at VGS = 10 V. It is housed in a compact SOT323 (SC-70) surface-mount package with three leads. The component is qualified to AEC-Q101 standards and supports an extended junction temperature range up to 175 °C.
Verify the specific ordering suffix matches the required packaging configuration, as variations exist within the product family. Confirm that the AEC-Q101 qualification status aligns with your target automotive or industrial environment requirements. Ensure design parameters remain within the specified absolute maximum ratings to prevent device degradation.
Select this component when a small form factor is required alongside high-temperature resilience. The low gate charge characteristics support efficient switching performance in space-constrained designs. Verify that the SOT323 footprint accommodates your PCB layout constraints while maintaining adequate thermal dissipation paths for the intended duty cycle.
This part belongs to the 2N7002 series of N-channel MOSFETs manufactured by Nexperia. It represents the automotive-grade variant distinguished by its AEC-Q101 qualification and extended temperature rating compared to standard commercial versions. The device utilizes advanced Trench technology to achieve low on-resistance within a minimal plastic surface-mount package.
Direct substitutes include other AEC-Q101 qualified N-channel MOSFETs in the SOT323 package with comparable voltage and current ratings. Verify pinout compatibility and thermal resistance values before implementation. Cross-reference datasheets to ensure threshold voltages match the driving circuit requirements.