2N7002BKS/ZLX

2N7002BKS/ZLX

  • Description:MOSFET 2N-CH 60V 0.3A 6TSSOP
  • Series:-

SKU:c8c55b57b370 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 0.3A 6TSSOP
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
  • Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:50pF @ 10V
  • Power - Max:1.04W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:6-TSSOP
  • Grade:-
  • Qualification:-

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2N7002BKS/ZLX

Overview

The Nexperia 2N7002BKS is a dual N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a compact SOT363 (SC-88) surface-mounted plastic package with six leads. The device supports a drain-source voltage of 60 V and a continuous drain current of 300 mA at 25 °C. Key electrical parameters include a gate-source voltage limit of ±20 V, a maximum on-state resistance of 1.6 Ω at VGS=10V, and a total gate charge of 0.6 nC. It features an operating junction temperature range up to 150 °C and is qualified under the AEC-Q101 automotive standard.

Feature Summary

  • Logic-level compatible for direct interface with standard logic outputs
  • Very fast switching performance enabled by Trench MOSFET technology
  • Electrostatic discharge protection rated up to 2 kV using the human body model
  • Qualified for automotive applications according to the AEC-Q101 standard

Applications

  • Relay driver circuits
  • High-speed line drivers
  • Low-side load switches
  • General purpose switching circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm manufacturing origin and tape-and-reel specifications. Confirm that the component status remains active and matches the required AEC-Q101 qualification level for your target application environment before finalizing procurement orders.

Selection Notes

Select this component when space-constrained designs require dual N-channel MOSFETs in a minimal footprint. The low threshold voltage and fast switching characteristics make it suitable for logic-controlled applications. Ensure thermal management accounts for the specified power dissipation limits within the SOT363 package constraints during operation.

Part Context

This part belongs to the Nexperia 2N7002 series of small-signal MOSFETs. It shares functional similarities with single-channel variants like the 2N7002BK but integrates two isolated channels in one package. The SOT363 form factor allows for higher component density compared to traditional leaded packages, supporting modern miniaturized electronic assemblies.

Replacement Considerations

Direct pin-compatible replacements within the same family include the 2N7002HSX. Verify that alternative components match the 60 V rating, 300 mA current capacity, and SOT363 package dimensions to ensure mechanical and electrical compatibility without redesigning the printed circuit board layout.

FAQ

What is the maximum electrostatic discharge rating for this device?

The device provides electrostatic discharge protection up to 2 kV when tested according to the human body model.

Is this component suitable for automotive applications?

Yes, the 2N7002BKS is qualified according to the AEC-Q101 standard for automotive use.

How many channels are integrated into this package?

The package contains two independent N-channel enhancement mode transistors configured as a dual device.

2N7002BKS/ZLX2N7002BKS/ZLX

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