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The 2N7002EQ-13-F is an N-channel enhancement mode MOSFET designed for automotive applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 334mA at +25°C. The device offers a low on-resistance of 3Ω at VGS=10V and 4Ω at VGS=4.5V. It is qualified to AEC-Q101 standards, supports PPAP, and is manufactured in IATF 16949 certified facilities. The component utilizes a compact SOT23 surface mount package.
Verify the specific ordering suffix '-13-F' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the required automotive qualification level matches the AEC-Q101 standard and that the manufacturing facility holds valid IATF 16949 certification for your supply chain requirements.
Select this component when designing circuits requiring high-reliability N-channel MOSFETs for automotive environments. Ensure the application operates within the specified 60V drain-source voltage limit and the thermal constraints defined by the junction-to-ambient resistance values provided in the datasheet.
This part belongs to the 2N7002 family of small signal field-effect transistors. It is specifically engineered to meet stringent automotive industry requirements, distinguishing it from general-purpose variants through its rigorous qualification processes and manufacturing controls.
Consult official Diodes Incorporated documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter alignment before replacing existing components in established designs.