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Product Detailed Parameters
- Description：MOSFET N-CH 60V 260MA SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：260mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：2.5Ohm @ 240mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.81 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：40 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300mW (Tj)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3 (TO-236)
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The onsemi 2N7002ET7G is a single N-channel small signal MOSFET housed in an SOT-23 (TO-236) surface-mount package. It features a drain-to-source voltage rating of 60 V and supports a steady-state drain current of 260 mA at 25°C, with a pulsed current capability of 1.2 A. The device utilizes trench technology to achieve a low maximum on-resistance of 2.5 Ω at 10 V gate drive. Electrical characteristics include a gate threshold voltage range of 1.0 V to 2.5 V and a total gate charge of 0.81 nC. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Utilizes trench technology for enhanced performance
- Designed for low on-resistance applications
- Available in a compact surface-mount footprint
- Qualified for automotive requirements under AEC-Q101
Applications
- Low side load switching
- Level shifting circuits
- DC-DC converter topologies
- Portable electronic devices such as digital cameras and PDAs
Procurement Notes
Verify the specific ordering suffix 'ET7G' against official documentation to confirm the 3500-unit tape and reel packaging configuration. Ensure that the procurement channel provides valid traceability for components designated with the 'S' prefix, which indicates unique site and control change requirements necessary for automotive or specialized quality standards.
Selection Notes
Select this component when a robust N-channel enhancement mode MOSFET is required for low-voltage signal switching. The device offers a balance of high breakdown voltage and low conduction losses suitable for battery-powered systems. Consider the thermal impedance and power dissipation limits relative to the expected duty cycle and ambient operating conditions during circuit design.
Part Context
This part belongs to the 2N7002E series of small signal MOSFETs manufactured by onsemi. The series is engineered for general-purpose switching tasks where space constraints are critical. The specific ET7G variant denotes a particular packaging and shipping format intended for automated surface-mount assembly processes.
Replacement Considerations
Consult the manufacturer's cross-reference data for verified substitutes. Potential alternatives may include other single N-channel MOSFETs with comparable 60 V ratings and SOT-23 footprints, provided their electrical parameters meet the specific circuit requirements.
