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Product Detailed Parameters
- Description：MOSFET N-CH 60V 320MA SOT23
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：320mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id：2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.7 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：24.5 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：300mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3 (TO-236)
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The onsemi 2N7002K is an N-channel enhancement mode field effect transistor designed for surface mount applications. It operates with a drain-source voltage of 60 V and supports a continuous drain current of 300 mA. The device features a low static drain-source on-resistance of 4 Ω at VGS = 4.5 V and ID = 200 mA, alongside a gate threshold voltage ranging from 1.0 V to 2.5 V. Total device dissipation is rated at 350 mW, with an operating junction temperature range spanning from -55°C to +150°C.
Feature Summary
- Low on-resistance for efficient power handling
- Fast switching speed capabilities
- Ultra-small surface mount package design
- High electrostatic discharge protection
Applications
- Power management circuits
- Motor drive systems
- Load switch implementations
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details such as tape and reel specifications. Ensure compliance with RoHS standards and confirm Pb-free status requirements match project specifications before finalizing procurement orders.
Selection Notes
Select this component when a compact N-channel MOSFET with moderate current handling is required. Consider the thermal resistance characteristics and maximum safe operating area limits during circuit design to ensure reliable operation within specified temperature ranges.
Part Context
This part belongs to the 2N7002 series of N-channel enhancement mode MOSFETs manufactured by onsemi. It utilizes silicon technology and is housed in a SOT-23 (TO-236) package. The device is intended for general-purpose switching applications requiring small form factors.
Replacement Considerations
Cross-reference with other manufacturers' 2N7002 variants if pinout compatibility is critical. Verify that alternative components meet or exceed the 60 V breakdown voltage and 300 mA current ratings.
