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Product Detailed Parameters
- Description：MOSFET SOT-23 N Channel 60V
- Series：SOT-23
- Mfr：MDD
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：900mOhm @ 300mA, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.31 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：23.8 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The MDD 2N7002K is a 60V N-channel enhancement mode MOSFET in an SOT-23 package. It features a drain-source breakdown voltage of 60V, continuous drain current of 0.6A, and gate-source voltage of ±20V. On-state resistance is 0.9Ω at VGS=10V/ID=0.5A and 1.4Ω at VGS=4.5V/ID=0.3A. Power dissipation is 0.3W with junction temperature up to +150°C. Input capacitance is 23.8pF, total gate charge is 0.93nC, and turn-on delay is 6ns. The device includes HMB ESD protection rated at 2000V.
Feature Summary
- High density cell design for low on-resistance
- Voltage controlled small signal switch
- HMB ESD protected (2000V)
- Rugged and reliable construction
Applications
- Load Switch for Portable Devices
- DC/DC Converter
Procurement Notes
Verify the specific datasheet revision against the manufacturer's official documentation before procurement. Confirm that the marking code '702K' matches the required component identification. Ensure the packaging format aligns with tape and reel specifications for automated assembly processes. Cross-reference electrical parameters with the latest approved specification sheet to guarantee compliance with design requirements.
Selection Notes
Select this component for low-side switching applications requiring logic-level compatibility and fast switching speeds. The SOT-23 package suits space-constrained portable designs. Evaluate thermal resistance and power dissipation limits under actual operating conditions. Consider the ESD protection rating for environments susceptible to electrostatic discharge events during handling or operation.
Part Context
This part belongs to the SMD Plastic-Encapsulate MOSFETs SOT-23 series. It utilizes trench MOSFET technology for enhanced performance. The device is designed as a voltage-controlled small signal switch suitable for various consumer electronics and industrial control circuits where compact size and efficient switching are critical.
Replacement Considerations
Cross-reference with Nexperia 2N7002BKM for DFN1006-3 package alternatives. Verify pinout compatibility and electrical parameter overlaps when substituting with other manufacturers' 2N7002 variants.
