2N7002KT1G

$0.16

Description：MOSFET N-CH 60V 320MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3984de3cf9e2 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 320MA SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.7 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：24.5 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：300mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3 (TO-236)
Package / Case：TO-236-3, SC-59, SOT-23-3

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2N7002KT1G

Overview

The onsemi 2N7002KT1G is a single N-channel enhancement mode MOSFET housed in a surface-mount SOT-23 package. It features a drain-source voltage rating of 60 V and a continuous drain current capacity of 380 mA at 25°C. The device exhibits a maximum on-resistance of 1.6 Ω at 10 V gate drive and 2.5 Ω at 4.5 V gate drive. Operating junction temperatures range from -55°C to +150°C, with a steady-state power dissipation of 420 mW on a 1 sq in pad.

Feature Summary

ESD protected design for enhanced reliability
Low on-resistance for efficient switching
Surface mount packaging for automated assembly

Applications

Low side load switch
Level shift circuits
DC-DC converter
Portable applications such as digital still cameras, PDAs, and cell phones

Procurement Notes

Verify the specific ordering suffix 'T1G' corresponds to the 3000-unit tape and reel configuration. Confirm that the component meets RoHS compliance standards and is lead-free. Ensure the application environment remains within the specified thermal limits for the SOT-23 package to maintain rated performance.

Selection Notes

Select this component for low-voltage signal switching and small-signal amplification tasks. The low gate charge supports fast switching speeds suitable for portable electronics. Verify that the required gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.

Part Context

This part belongs to the 2N7002K series of small signal MOSFETs manufactured by onsemi. It utilizes silicon technology and is designed for general-purpose switching applications. The device is qualified under AEC-Q101 standards, making it suitable for automotive and other demanding environments requiring unique site and control change requirements.