SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Comchip Technology 2N7002W-G is an N-channel enhancement mode MOSFET designed for small-signal switching applications. It features a drain-source voltage rating of 60V and a continuous drain current capacity of 350mA. The device utilizes a SOT-323 surface-mount package, providing a compact footprint suitable for space-constrained designs. Key electrical characteristics include a maximum gate-source voltage of ±20V and a power dissipation capability of 350mW at 25°C ambient temperature. The component operates within a junction temperature range from -55°C to +150°C, ensuring reliability across diverse environmental conditions.
Verify the specific suffix 'W' against the manufacturer's official datasheet to confirm package type and pinout configuration. Ensure compliance with RoHS directives if required by your assembly process. Cross-reference the part number with authorized distributors to validate authenticity and traceability. Confirm that the sourcing channel provides original manufacturer documentation rather than third-party interpretations.
Select this component when a compact SOT-323 package is required alongside standard 60V blocking capability. Evaluate the 350mA continuous current rating against peak load requirements to ensure adequate margin. Consider the thermal resistance characteristics if multiple devices are placed in close proximity on the PCB layout.
This part belongs to the general 2N7002 family of N-channel MOSFETs widely used in consumer electronics. While many manufacturers produce variants under similar naming conventions, the Comchip Technology version specifies distinct packaging and electrical tolerances. The 'W' suffix typically denotes a specific tape-and-reel or cut-tape packaging format intended for automated surface-mount assembly processes.
Direct substitutes include Nexperia BSS138PW and Diodes Incorporated DMN62D0LFD-7. Verify pin compatibility and electrical parameters before substitution.