2PB709AQ,115

Single Bipolar Transistors Overview

The 2PB709AQ,115 is a PNP general-purpose transistor manufactured by NXP Semiconductors. It is housed in an SC-59 (SOT346) plastic surface-mounted package with three leads. The device supports a maximum collector-emitter voltage of -45 V and a continuous DC collector current of -100 mA. Key electrical characteristics include a minimum DC current gain (hFE) of 160 at -2 mA collector current for the AQ suffix variant, a transition frequency (fT) of 60 MHz, and a collector capacitance of 5 pF.

Single Bipolar Transistors Feature Summary

• PNP bipolar junction transistor configured for low-voltage and low-current operations
• Designed for general-purpose switching and amplification applications
• Utilizes an SC-59 plastic surface-mount package for compact integration

Single Bipolar Transistors Applications

• General purpose switching circuits
• Amplification stages in electronic systems

Single Bipolar Transistors Procurement Notes

Verify that the ordering suffix '115' corresponds to the specific tape-and-reel packaging configuration defined by the manufacturer's standard logistics protocols. Confirm component authenticity through authorized distribution channels to ensure compliance with the original datasheet specifications and quality standards.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a -45 V collector-emitter rating and -100 mA current capacity is required. The AQ suffix provides a guaranteed hFE range of 160 to 260, suitable for applications demanding moderate current gain. Ensure the thermal resistance of 500 K/W aligns with the system's heat dissipation capabilities.

Single Bipolar Transistors Part Context

This part belongs to the 2PB709A series of PNP general-purpose transistors. The 'AQ' suffix denotes specific binning for DC current gain and transition frequency parameters within the SC-59 package family. The '115' suffix indicates the standard reel packaging format used for automated assembly processes.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2PB601A as the NPN complement. Direct replacements must match the -45 V voltage rating, -100 mA current limit, and SOT346 pinout configuration to maintain circuit functionality without modification.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2PB709AQ variant?

For the 2PB709AQ marking code, the minimum DC current gain (hFE) is 160 and the maximum is 260, measured at a collector current of -2 mA and VCE of -10 V.

What is the maximum power dissipation for this transistor?

The total power dissipation is rated at 250 mW when the ambient temperature is 25 °C or lower, based on mounting on an FR4 printed-circuit board.