Single Bipolar Transistors 2SA1381ESTU product image

2SA1381ESTU

  • Description:TRANS PNP 300V 0.1A TO-126-3
  • Series:-

SKU:8626c6b7d4b3 Category: Brand:

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2SA1381ESTU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 300V 0.1A TO-126-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SA1381ESTU

  • Description:TRANS PNP 300V 0.1A TO-126-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):300 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 2mA, 20mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 10V
  • Power - Max:7 W
  • Frequency - Transition:150MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SA1381ESTU

2SA1381ESTU

Single Bipolar Transistors Overview

The 2SA1381ESTU is a PNP epitaxial silicon transistor manufactured by onsemi. It features a collector-emitter voltage (VCEO) of -300 V and a transition frequency (ft) of 150 MHz. The device supports a maximum power dissipation (Pd) of 7 W and a continuous collector current (IC) of -100 mA. It exhibits a minimum DC current gain (hFE) of 100. The component is housed in a TO-126 package with three terminals and operates at a maximum junction temperature of 150 °C.

Single Bipolar Transistors Feature Summary

  • High voltage capability rated at -300 V for robust operation
  • Low reverse transfer capacitance to support high-frequency performance
  • Excellent gain linearity designed to minimize total harmonic distortion

Single Bipolar Transistors Applications

  • Audio amplification circuits
  • Voltage amplifier stages
  • Current source implementations
  • CRT display and video output drivers

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer origin, as this part number has been produced by both Fairchild Semiconductor and onsemi following industry acquisitions. Confirm that the datasheet specifications align with your design requirements, particularly regarding thermal management and voltage ratings. Ensure compliance with RoHS directives if required by your manufacturing standards.

Single Bipolar Transistors Selection Notes

Select this component when high-voltage PNP switching or amplification is required in a compact surface-mount or through-hole form factor. Its high transition frequency makes it suitable for RF and audio applications where low distortion is critical. Consider the 7 W power dissipation limit and ensure adequate heat sinking or PCB copper area is available for thermal regulation during operation.

Single Bipolar Transistors Part Context

This transistor belongs to the family of high-voltage PNP epitaxial silicon devices. It serves as a complement to NPN counterparts such as the 2SC3503 or KSC3503, often used in push-pull configurations. The TO-126 package provides a balance between power handling and board space efficiency, making it common in consumer electronics and industrial control systems.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2SA1381 from various manufacturers like Sanyo or Inchange Semiconductor. Verify pinout compatibility and electrical parameters before substitution. Cross-reference with the NPN complement 2SC3503 if designing balanced amplifier stages.

2SA1381ESTU2SA1381ESTU

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