2SA1705T-AN

Single Bipolar Transistors Overview

The onsemi 2SA1705T-AN is a PNP single NPN bipolar transistor designed for low VCE(sat) applications. It features an FBET process and fast switching speed. The device operates with a collector-to-emitter voltage of -50V and a continuous collector current of -1A. Key electrical characteristics include a DC current gain (hFE) ranging from 140 to 400 at -100mA, a gain-bandwidth product of 150MHz, and a collector dissipation of 0.9W. The component is housed in an NMP(Taping) package conforming to JEITA/JEDEC SC-71 standards.

Single Bipolar Transistors Feature Summary

• Adoption of FBET process technology
• Fast switching speed capability
• Low collector-to-emitter saturation voltage

Single Bipolar Transistors Applications

• Voltage regulators
• Relay drivers
• Lamp drivers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'T-AN' corresponds to the NMP tape-and-reel packaging configuration containing 2,500 pieces per box. Confirm that the component meets Pb Free requirements as specified in the datasheet ordering information. Ensure technical specifications align with the absolute maximum ratings and electrical characteristics provided in the official documentation before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring a PNP transistor with high DC current gain and rapid switching performance. The low saturation voltage makes it suitable for efficient power handling in driver applications. Consider the thermal constraints associated with the 0.9W collector dissipation rating and the SC-71 package dimensions when designing the PCB layout and heat management strategy.

Single Bipolar Transistors Part Context

This part belongs to the 2SA1705 series manufactured by Semiconductor Components Industries, LLC (onsemi). It utilizes an epitaxial planar silicon construction optimized for general-purpose amplification and switching tasks. The device is classified under small signal bipolar transistors and is intended for use in consumer electronics and industrial control systems where compact size and reliable operation are required.

Single Bipolar Transistors Replacement Considerations

The 2SA1705S-AN serves as a direct alternative within the same series, differing primarily in its bag packing specification rather than electrical performance. Both variants share identical pinouts and operational parameters.

Single Bipolar Transistors FAQ

What is the maximum collector-to-emitter breakdown voltage?

The maximum collector-to-emitter breakdown voltage (V(BR)CEO) is -50V.

What is the typical gain-bandwidth product?

The gain-bandwidth product (fT) is typically 150 MHz at a collector current of -50mA.

How is the device packaged?

The 2SA1705T-AN is packaged in an NMP(Taping) format, which conforms to the JEITA and JEDEC SC-71 standard.