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2SA2169-H-TL-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is IC REG LINEAR. Review the specifications below when checking this part for your BOM.
The onsemi 2SA2169-H-TL-E is a PNP epitaxial planar silicon transistor designed for high-current switching applications. It features a collector current rating of -10A and a collector-emitter voltage of -50V. The device exhibits a low collector-emitter saturation voltage of 290 mV, ensuring efficient power handling. Key electrical parameters include an emitter-base voltage of 6V, a maximum power dissipation of 20W, and a gain bandwidth product of 130 MHz. These specifications support robust performance in demanding electronic circuits requiring reliable bipolar junction transistor functionality.
Verify the specific suffix (e.g., TL-E) against official datasheets to confirm tape-and-reel packaging and exact electrical tolerances. Ensure compatibility with thermal management requirements given the 20W power dissipation limit. Cross-reference pinout configurations to prevent installation errors during assembly processes.
Select this component when a PNP transistor with -10A capacity and -50V rating is required. Consider the 290 mV saturation voltage for efficiency needs. Evaluate the 130 MHz gain bandwidth for frequency response constraints. Confirm package type availability matches board layout requirements before finalizing the design choice.
This part belongs to the 2SA2169 series, often paired with its NPN counterpart, the 2SC6017. Both devices share similar structural characteristics and are intended for complementary use in push-pull amplifier stages or motor driver circuits. The series emphasizes low saturation voltage to minimize power loss during conduction phases.
Public confirmed substitute part numbers: 2SA2169-E, 2SA2169-TL-E.
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