2SA2210

Single Bipolar Transistors Overview

The onsemi 2SA2210 is a PNP epitaxial planar silicon bipolar junction transistor designed for high-current switching applications. It features a TO-220F-3SG through-hole package and supports a maximum collector current of 20 A with a collector-emitter voltage rating of 50 V. The device utilizes MBIT process technology to achieve low collector-to-emitter saturation voltage, specified at 200 mV under typical conditions. Key electrical parameters include a DC current gain (hFE) ranging from 150 to 450, a transition frequency (fT) of 140 MHz, and a total power dissipation capability of 30 W at 25°C ambient temperature. The component operates within a junction temperature range up to +150°C.

Single Bipolar Transistors Feature Summary

• Adopts MBIT process technology for enhanced performance
• Provides large current capacitance suitable for heavy loads
• Features low collector-to-emitter saturation voltage for efficiency
• Enables high-speed switching capabilities

Single Bipolar Transistors Applications

• Relay drivers
• Lamp drivers
• Motor drivers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to ensure correct packaging and compliance status. Confirm that the procurement channel provides authentic onsemi components with traceable lot codes. Check for any recent product change notifications or end-of-life announcements prior to finalizing orders. Ensure storage and handling procedures comply with moisture sensitivity levels defined in the datasheet to maintain device reliability during assembly.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high continuous current handling up to 20 A with tight saturation voltage constraints. The TO-220F-3SG package facilitates effective thermal management for power dissipation scenarios. Consider the 140 MHz transition frequency for switching speeds appropriate for standard industrial frequencies. Evaluate the 50 V breakdown voltage to ensure adequate headroom for inductive load flyback voltages in motor or relay control loops.

Single Bipolar Transistors Part Context

This part belongs to the 2SA2210 series of PNP power transistors manufactured by onsemi. It is engineered specifically for robust switching duties where low conduction losses are critical. The device represents a solution for replacing older generation transistors in high-power analog and digital switching environments, offering improved thermal characteristics and current density compared to standard discrete alternatives.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.