2SC2712-BL,LF

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC2712-BL,LF is a single NPN bipolar junction transistor (BJT) designed for surface-mount applications. It features a maximum collector current of 150 mA and a collector-emitter breakdown voltage of 50 V. The device operates with a transition frequency of 80 MHz and a maximum power dissipation of 150 mW. Key electrical characteristics include a DC current gain (hFE) of at least 70 at 2 mA and 6 V, and a collector-emitter saturation voltage of 250 mV at 10 mA base and 100 mA collector currents. The component supports a maximum junction temperature of 125°C and utilizes the S-Mini (TO-236-3/SC-59/SOT-23-3) package.

Single Bipolar Transistors Feature Summary

• NPN configuration optimized for general-purpose switching and amplification tasks
• Low saturation voltage ensures efficient performance in low-voltage circuits
• Surface-mount S-Mini package facilitates automated assembly and compact board design

Single Bipolar Transistors Applications

• General-purpose signal switching
• Amplifier stages in consumer electronics
• Driver circuits for small loads

Single Bipolar Transistors Procurement Notes

Verify the specific suffix BL against the manufacturer's datasheet to confirm binning or grading specifications. Ensure the ordering part number matches the required tape-and-reel or cut-tape format. Confirm RoHS compliance status and moisture sensitivity level requirements prior to procurement to align with assembly processes.

Single Bipolar Transistors Selection Notes

Select this component when a small-signal NPN transistor with moderate current handling and standard voltage ratings is required. Consider the 150 mA continuous collector current limit and 150 mW power dissipation constraints during thermal design. Verify that the S-Mini footprint fits the target PCB layout and that the 80 MHz transition frequency meets the circuit speed requirements.

Single Bipolar Transistors Part Context

This part belongs to the 2SC2712 series of general-purpose NPN transistors manufactured by Toshiba Semiconductor and Storage. The series offers variants differentiated by suffix codes, such as GR or Y, which may indicate different hFE bins or packaging options. The 2SC2712-BL,LF represents a specific configuration within this family, standardized for lead-free compliance and surface-mount integration.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult the official Toshiba datasheet for recommended cross-reference models or equivalent devices from other manufacturers that match the specified electrical parameters and package dimensions.