2SC3668-Y,T2F(M

Single Bipolar Transistors Overview

The Toshiba 2SC3668-Y,T2F(M is a silicon NPN epitaxial transistor manufactured using the PCT process. It features a maximum collector current of 2 A and a collector-emitter breakdown voltage of 50 V. The device provides a low saturation voltage of 0.5 V (max) at 1 A and supports high-speed switching with a typical storage time of 1.0 μs. It offers a collector power dissipation of 1000 mW, a transition frequency of 100 MHz, and a DC current gain ranging from 40 to 240 depending on operating conditions.

Single Bipolar Transistors Feature Summary

• Complementary pairing with the 2SA1428 PNP transistor for push-pull configurations
• Low collector saturation voltage enabling efficient power handling
• High-speed switching capability suitable for rapid signal transitions

Single Bipolar Transistors Applications

• Power amplifier circuits
• General-purpose power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffixes against official Toshiba Semiconductor documentation to confirm environmental compliance status, such as RoHS compatibility, and lot number marking conventions. Confirm that the package type matches the required JEDEC or JEITA specifications before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring an NPN transistor with a 50 V collector-emitter rating and up to 2 A continuous current capacity. Ensure the design accommodates the 1000 mW power dissipation limit and utilizes appropriate heat sinking if operating near maximum ratings. Verify that the complementary 2SA1428 is available if symmetrical push-pull operation is required.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SC3668 series of general-purpose small-signal transistors. It is designed for use in consumer electronics, office equipment, and industrial control systems where reliable switching and amplification are needed within standard voltage and current limits.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA1428 as the complementary PNP counterpart. No other direct substitute part numbers are documented in the provided source material.