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2SC4102T106S is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 120V 0.05A UMT3. Review the specifications below when checking this part for your BOM.
The 2SC4102T106S is a single NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It features a collector-emitter breakdown voltage of 120 V and a maximum continuous collector current of 50 mA. The device operates with a power dissipation rating of 200 mW and exhibits a transition frequency of 140 MHz. DC current gain ranges from 180 to 560, with a typical saturation voltage of 500 mV at specified test conditions. It is housed in a UMT3 (SC-70/SOT-323) surface-mount package and supports a maximum junction temperature of +150°C.
Verify component authenticity through authorized distribution channels due to the NRND status. Confirm RoHS3 compliance and MSL level 1 handling requirements during storage and assembly. Validate that the specific suffix matches the required tape-and-reel quantity of 3000 units for production integration.
Select this component when a 120 V rated NPN transistor is required in a minimal footprint SC-70 package. Ensure the design accommodates the 200 mW thermal limit and 140 MHz bandwidth constraints. Consider the complementary 2SA1579 if push-pull or differential stage topologies are necessary for the application architecture.
This part belongs to the 2SC4102 series of high-voltage amplifier transistors. It is designed as a compact alternative to larger packages while maintaining robust voltage ratings. The series includes complementary PNP devices and complex transistor variants for specialized circuit implementations requiring matched characteristics.
The 2SC4102U3T106S is documented as a similar replacement option within the same manufacturer portfolio.
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