2SC4117-BL,LF

Single Bipolar Transistors Overview

The 2SC4117-BL,LF is a silicon NPN epitaxial transistor manufactured by Toshiba using the PCT process. It features a collector-emitter voltage of 120 V and a maximum collector current of 100 mA. The device provides a DC current gain (hFE) ranging from 350 to 700 for the BL suffix variant. Electrical characteristics include a transition frequency of 100 MHz and a noise figure of 1 dB typical at 1 kHz. It operates within a junction temperature range up to 150 °C when mounted on an FR4 board.

Single Bipolar Transistors Feature Summary

• High breakdown voltage capability with a collector-emitter rating of 120 V
• Excellent hFE linearity maintaining a ratio of 0.95 between low and medium currents
• Low noise performance suitable for sensitive audio frequency applications
• Complementary pairing available with the 2SA1587 PNP transistor

Single Bipolar Transistors Applications

• Audio frequency general purpose amplifier circuits
• Automotive electronic systems requiring AEC-Q101 qualification
• Low noise signal amplification stages
• General purpose switching and amplification tasks

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm the package type and tape/reel configuration. Confirm AEC-Q101 automotive qualification status directly with Toshiba sales representatives as detailed information may require direct inquiry. Ensure compliance with RoHS directives and verify environmental restrictions before final procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high voltage handling in a small surface-mount package. The BL suffix indicates a higher hFE bin compared to standard variants. Consider the complementary 2SA1587 for push-pull configurations. Evaluate thermal derating requirements based on the specific mounting conditions and ambient temperature constraints.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's lineup of silicon NPN epitaxial transistors designed for audio and general-purpose applications. It utilizes the proprietary PCT process technology. The device is housed in a SC-70 (SOT-323) package, providing a compact footprint suitable for space-constrained modern electronic designs.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SA1587 as the complementary PNP counterpart. No other direct substitute part numbers are documented in the official specifications.