2SC4207-GR(TE85L,F

Overview

The Toshiba 2SC4207-GR(TE85L,F) is a dual NPN silicon epitaxial planar transistor utilizing the PCT process. It features a compact SOT-363 package with two independent transistors sharing a common emitter. The device supports a collector-emitter voltage of 50 V and a continuous collector current of 150 mA per element, with a total power dissipation of 300 mW. The DC current gain (hFE) for the GR suffix ranges from 200 to 400 at IC = 2 mA. Key electrical parameters include a transition frequency of 80 MHz, a collector-base breakdown voltage of 60 V, and an emitter-base breakdown voltage of 5 V.

Feature Summary

• Dual configuration in a small surface-mount package
• High voltage and current handling capabilities
• High DC current gain with excellent linearity
• Complementary pairing with the 2SA1618 PNP transistor

Applications

• Audio frequency general purpose amplifier circuits
• Low-frequency output amplification stages
• Driver amplification applications

Procurement Notes

Verify the specific ordering suffix to confirm hFE classification and environmental compliance. The TE85L designation indicates tape-and-reel packaging suitable for automated assembly. Confirm RoHS compatibility status directly with the manufacturer or authorized distributor before finalizing procurement plans.

Selection Notes

Select this component when a dual NPN configuration is required in a minimal footprint. The GR suffix provides a guaranteed hFE range of 200 to 400, ensuring consistent performance for linear amplification tasks. Ensure the design accounts for the 300 mW total power dissipation limit shared between both transistors within the SOT-363 package.

Part Context

This part belongs to the 2SC4207 series of dual NPN transistors designed for audio and general-purpose amplification. It serves as the complementary counterpart to the 2SA1618 PNP transistor, facilitating balanced push-pull circuit designs. The series utilizes Toshiba's PCT process technology for improved reliability and performance characteristics.

Replacement Considerations

The 2SA1618 is the designated complementary PNP transistor for this series. Direct pin-compatible replacements should be verified against absolute maximum ratings and hFE specifications to ensure circuit functionality remains unchanged.