2SC4207-Y(TE85L,F)

Overview

The Toshiba Semiconductor and Storage 2SC4207-Y(TE85L,F) is a dual-type silicon NPN epitaxial transistor utilizing the PCT process. It features a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 150 mA. The device provides a DC current gain (hFE) range of 120 to 240 for the Y classification, with an excellent hFE linearity ratio of 0.95 at specified currents. Electrical characteristics include a transition frequency (fT) of 80 MHz and a collector output capacitance (Cob) of 2 pF. Total power dissipation is rated at 300 mW, supporting junction temperatures up to 150°C.

Feature Summary

• Dual configuration in a small package designed for audio frequency general-purpose amplifier applications
• High voltage and high current handling capabilities with VCEO of 50 V and IC of 150 mA
• Excellent hFE linearity ensuring consistent performance across varying collector currents

Applications

• Audio frequency general-purpose amplifier circuits
• Complementary pairing with 2SA1618 PNP transistors
• General purpose amplification tasks requiring high linearity

Procurement Notes

Verify the specific ordering suffix TE85L,F against official Toshiba documentation to confirm packaging format and environmental compliance status. Ensure that the Y classification matches the required hFE binning for your design specifications. Confirm RoHS compatibility directly with the manufacturer or authorized distributors before procurement.

Selection Notes

Select this component when a dual NPN configuration is required for audio amplification. The Y classification restricts the DC current gain to 120–240; verify if higher gain bins like GR or BL are needed. Consider the complementary 2SA1618 for matched push-pull designs. Evaluate thermal derating requirements as total power dissipation is limited to 300 mW.

Part Context

This part belongs to the 2SC4207 series of dual NPN transistors manufactured by Toshiba Semiconductor and Storage. It is specifically engineered for audio frequency applications, offering a compact solution compared to discrete single-transistor implementations. The device utilizes the PCT process to achieve its electrical characteristics.

Replacement Considerations

The datasheet explicitly identifies the 2SA1618 as the complementary counterpart. No other direct substitute part numbers are documented in the provided source material.