2SC4604,F(J

Description：TRANS NPN 50V 3A TO-92MOD
Series：-

SKU:0d74a25825ec Category: Single Bipolar Transistors Brand: Toshiba Semiconductor and Storage

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Product introduction

2SC4604,F(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 50V 3A TO-92MOD. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC4604,F(J

Description：TRANS NPN 50V 3A TO-92MOD
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：3:00 AM
Voltage - Collector Emitter Breakdown (Max)：50 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 75mA, 1.5A
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 100mA, 2V
Power - Max：900 mW
Frequency - Transition：100MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 Long Body
Supplier Device Package：TO-92MOD
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC4604,F(J

2SC4604,F(J

Single Bipolar Transistors Overview

The Toshiba 2SC4604 is a silicon NPN epitaxial planar transistor utilizing the PCT process, housed in a JEDEC TO-92MOD package. It features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 3 A. The device offers a low collector-emitter saturation voltage of 0.5 V at 1.5 A and a typical storage time of 0.5 μs. Its transition frequency reaches 100 MHz, with a DC current gain ranging from 120 to 400 at 100 mA.

Single Bipolar Transistors Feature Summary

Low collector-emitter saturation voltage for efficient power handling
High-speed switching capability with short storage times
Complementary pairing with the 2SA1761 PNP transistor

Single Bipolar Transistors Applications

Power amplifier circuits
General power switching applications

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status directly with the manufacturer or authorized distributor before procurement, as the datasheet indicates this requires specific product-by-product confirmation. Ensure the ordering suffix matches the required lead-free finish specifications. Confirm that the application environment remains within the specified absolute maximum ratings to maintain reliability standards.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high-speed switching and low saturation voltage in a compact through-hole package. Consider its complementary relationship with the 2SA1761 for push-pull configurations. Evaluate thermal management requirements against the 900 mW power dissipation limit and ensure operating conditions stay within the safe operating area curves provided in the electrical characteristics.

Single Bipolar Transistors Part Context

This NPN transistor belongs to Toshiba's discrete semiconductor lineup designed for general electronics. It utilizes an epitaxial planar structure optimized for audio and RF power amplification. The device is intended for use in computer, office equipment, and domestic appliances, excluding safety-critical or medical instrumentation applications.

Single Bipolar Transistors Replacement Considerations

The 2SA1761 serves as the designated complementary PNP counterpart for balanced circuit design. Verify pinout compatibility and electrical parameter alignment when substituting with other TO-92MOD NPN transistors offering similar voltage and current ratings.