2SC5010-A

Overview

The CEL 2SC5010-A is an NPN silicon epitaxial transistor designed for low noise and small signal applications. It utilizes the proprietary NEST3 direct nitride passivated base surface process to achieve high dynamic range and excellent linearity. The device operates effectively from the VHF band to the L band, offering a low noise figure, high gain, and high current capability. Key electrical parameters include a transition frequency (fT) of 12.0 GHz typical at VCE = 3V, IC = 10 mA, and f = 2 GHz. The reverse capacitance (Cre) is typically 0.4 pF at VCE = 3V, IE = 0, and f = 1 MHz. The component is housed in a 3-pin Ultra Super Mini Mold package.

Feature Summary

• High transition frequency suitable for VHF to L band amplifiers
• Low voltage operation capability with high current drive
• Minimized reverse capacitance for improved high-frequency performance
• High forward transmission coefficient (|S21e|) for efficient signal amplification

Applications

• VHF to L band low noise amplifiers
• Small signal RF amplification circuits
• High linearity amplifier stages requiring wide dynamic range

Procurement Notes

Verify the specific suffix 'A' against the manufacturer's official documentation to confirm if it denotes a specific binning, tape-and-reel configuration, or environmental compliance status distinct from the standard 2SC5010. Ensure the ordering part number matches the exact datasheet revision required for your design specifications. Cross-reference the JEITA part number designation to confirm compatibility with existing supply chain requirements.

Selection Notes

Select this component when designing circuits that require high transition frequency and low noise figures in the VHF to L band spectrum. The device is appropriate for applications demanding high linearity and wide dynamic range. Consider the 3-pin Ultra Super Mini Mold package dimensions during PCB layout to ensure proper thermal management and mechanical fit. Verify that the operating conditions align with the specified VCE and IC parameters for optimal fT and Cre performance.

Part Context

The 2SC5010 is part of CEL's portfolio of NPN silicon epitaxial transistors utilizing the NEST3 fabrication technique. This technology focuses on direct nitride passivation of the base surface to enhance reliability and electrical performance. The series is engineered specifically for RF applications where low noise and high gain are critical, distinguishing it from general-purpose switching transistors.

Replacement Considerations

Consult official substitution guides for equivalent NPN RF transistors with similar fT and Cre specifications. Verify pinout compatibility and package dimensions before replacing the component in existing designs.