SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The 2SC5084-O(TE85L,F) is an NPN silicon epitaxial planar bipolar transistor designed for VHF and UHF band low noise amplifier applications. It features a maximum collector-emitter voltage of 12V, a continuous collector current of 80mA, and a transition frequency of 7GHz. The device operates with a maximum power dissipation of 150mW and offers a minimum DC current gain (hFE) of 80. Packaged in the S-Mini (SC-59/SOT-23-3) surface-mount format, it supports a junction temperature up to 125°C.
Verify component authenticity through authorized Toshiba Semiconductor and Storage distributors or certified partners. Confirm that the received units match the specific ordering suffix TE85L,F to ensure correct packaging and tape specifications. Request official datasheets and test reports to validate performance parameters against application requirements before integration into production systems.
Select this component when designing circuits requiring high-frequency performance in the VHF and UHF ranges with strict low-noise constraints. Ensure the system voltage does not exceed the 12V collector-emitter rating and that thermal management can handle the 150mW power dissipation limit within the compact S-Mini footprint. Verify compatibility with existing RF layout guidelines for small-signal transistors.
This part belongs to the 2SC5084 series of silicon NPN epitaxial planar transistors manufactured by Toshiba Semiconductor and Storage. These devices are specifically engineered for radio frequency applications, providing a balance of high gain and low noise figure suitable for sensitive receiver chains and signal conditioning stages in modern electronic systems.
Public confirmed substitute part numbers are not available in the provided documentation. Consult Toshiba Semiconductor and Storage technical support for direct replacements or cross-reference options compatible with the 2SC5084 series specifications.