2SC5347E-TD-E

$0.13

Description：BIP NPN 150MA 12V FT=4.7G
Series：-

SKU:f92819c45b61 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

2SC5347E-TD-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is BIP NPN 150MA 12V FT=4.7G. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC5347E-TD-E

Description：BIP NPN 150MA 12V FT=4.7G
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：-
Current - Collector (Ic) (Max)：-
Voltage - Collector Emitter Breakdown (Max)：-
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Power - Max：-
Frequency - Transition：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC5347E-TD-E

2SC5347E-TD-E

Single Bipolar Transistors Overview

The 2SC5347E-TD-E is a discontinued NPN silicon RF bipolar transistor manufactured by onsemi. Designed for high-frequency applications, it operates at a transition frequency of 4.7 GHz. The device features a maximum collector-emitter voltage (VCEO) of 12 V and an emitter-base voltage (VEBO) of 2 V. It supports a continuous collector current of 150 mA with a minimum DC current gain (hFE) of 60 at 10 mA and 5 V. Power dissipation is rated at 1.3 W, with a maximum operating temperature of +150°C. The component is housed in a TO-243-3 surface-mount package.

Single Bipolar Transistors Feature Summary

High-frequency medium output amplification capability
Low-noise performance characteristics
Suitable for high-frequency semi-power output stages

Single Bipolar Transistors Applications

High-frequency medium output amplifier circuits
RF signal processing stages
Semi-power output stage configurations

Single Bipolar Transistors Procurement Notes

This component is officially listed as discontinued by the manufacturer. Availability is limited to existing stock or secondary market sources. Verify end-of-life status and last-time-buy dates through official channels before design integration. Sourcing from unauthorized distributors may risk counterfeit components. Ensure compliance with RoHS requirements via specific datasheet verification.

Single Bipolar Transistors Selection Notes

Select this part only if legacy compatibility is required, as it is no longer recommended for new designs. Consider the low voltage rating of 12 V and moderate current capacity of 150 mA when evaluating circuit demands. The TO-243-3 package requires appropriate thermal management due to 1.3 W power dissipation. Evaluate alternative modern RF transistors with higher efficiency and availability for new projects.

Single Bipolar Transistors Part Context

The 2SC5347 series belongs to onsemi's portfolio of RF bipolar transistors designed for communication equipment. This specific variant targets applications requiring stable amplification at UHF frequencies. The device utilizes silicon technology optimized for high-frequency operation. It serves as a specialized component for medium-power RF stages where noise performance and linearity are critical factors in system design.

Single Bipolar Transistors Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Designers should consult onsemi technical support for current equivalent recommendations or consider generic RF BJT alternatives with matching electrical specifications.