2SD12950RL

Single Bipolar Transistors Overview

The Panasonic 2SD1295 is a silicon NPN epitaxial planar power transistor designed for low-frequency output amplification. It operates with a collector-emitter voltage of 40 V and a continuous collector current of 1.5 A, capable of handling peak currents up to 3 A. The device dissipates 10 W of power at 25°C and features a transition frequency of 150 MHz. It utilizes the U-G2 (SC-63) package, allowing direct soldering of the radiation fin to printed circuit boards.

Single Bipolar Transistors Feature Summary

• Designed for low-frequency output amplification applications
• Features a self-supported package enabling direct soldering of the radiation fin to printed circuit boards
• Capable of delivering 4 W output when paired in a complementary configuration with the 2SB0968 PNP transistor

Single Bipolar Transistors Applications

• Low-frequency output amplification circuits
• General electronic equipment such as office and communications devices
• Measuring instruments and household appliances

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact packaging and compliance status. Confirm the current lifecycle stage, as this component may be subject to planned maintenance or discontinuation. Ensure that the final specifications align with the most recent product standards before purchasing.

Single Bipolar Transistors Selection Notes

Select this component for low-frequency power amplification tasks requiring high thermal dissipation capabilities. The U-G2 package facilitates efficient heat transfer through direct board mounting. Consider pairing with the complementary 2SB0968 for push-pull configurations to maximize output power within the specified voltage and current limits.

Single Bipolar Transistors Part Context

This component belongs to the Panasonic 2SD series of silicon NPN transistors. It is specifically engineered for general-purpose power amplification where robust thermal management is required. The design supports standard industrial and consumer electronics manufacturing processes.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SB0968 as the complementary pair for this device. No other direct replacement part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the maximum collector power dissipation?

The maximum collector power dissipation is 10 W at a case temperature of 25°C.

Can the radiation fin be soldered directly to the PCB?

Yes, the U-G2 package allows the radiation fin to be soldered directly to the printed circuit board.

What is the forward current transfer ratio range?

The forward current transfer ratio (hFE) ranges from 80 to 220 under specified test conditions.