2SD14740P

Single Bipolar Transistors Overview

The Panasonic 2SD1474 is a silicon NPN epitaxial planar transistor designed for power amplification applications requiring high forward current transfer ratio. It features a TO-220F-A1 package with collector connected to the case for efficient heat sinking. Key electrical parameters include a maximum collector-emitter voltage of 60 V, a continuous collector current rating of 6 A, and a peak collector current of 12 A. The device offers a collector power dissipation of 40 W at 25°C ambient temperature and supports junction temperatures up to 150°C.

Single Bipolar Transistors Feature Summary

• High forward current transfer ratio (hFE) with satisfactory linearity
• High emitter-base voltage capability under open collector conditions
• Full-pack package design allowing direct installation to a heat sink using a single screw

Single Bipolar Transistors Applications

• Power amplification circuits
• General electronic equipment
• Office equipment
• Communications equipment
• Measuring instruments

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (Q or P) required for your circuit design against the datasheet specifications. Confirm that the component meets RoHS Directive compliance standards if applicable to your manufacturing process. Ensure proper thermal management is integrated into the system design to maintain safe operating temperatures within the specified limits.

Single Bipolar Transistors Selection Notes

Select this component when designing power amplifier stages that require high current gain and robust thermal performance. The TO-220F-A1 package facilitates effective heat dissipation through direct mounting to a heatsink. Consider the transition frequency and switching times for signal integrity requirements in the intended application environment.

Single Bipolar Transistors Part Context

This component belongs to the Panasonic semiconductor discrete transistor family, specifically engineered for general-purpose power amplification tasks. It utilizes a triple diffusion planar technology structure to ensure reliability and consistent electrical characteristics across varying operating conditions and environmental stresses.

Single Bipolar Transistors Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers before implementation. Cross-referencing with similar components from other manufacturers requires careful validation of pinout compatibility and absolute maximum ratings to ensure functional equivalence.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) with the base open is rated at 60 V.

How is the device packaged for thermal management?

It uses a TO-220F-A1 full-pack package where the collector is electrically connected to the case, allowing direct installation onto a heat sink with one screw.

What are the available hFE ranks?

The datasheet specifies two forward current transfer ratio ranks: Rank Q (300 to 1,200) and Rank P (800 to 2,000).