2SD1527-E

$1.07

Description：TRANS NPN 1000V 0.5A TO-220AB
Series：-

SKU:43a564b18128 Category: Single Bipolar Transistors Brand: Renesas Electronics Corporation

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Product introduction

2SD1527-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is TRANS NPN 1000V 0.5A TO-220AB. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD1527-E

Description：TRANS NPN 1000V 0.5A TO-220AB
Series：-
Mfr：Renesas Electronics Corporation
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：500 mA
Voltage - Collector Emitter Breakdown (Max)：1000 V
Vce Saturation (Max) @ Ib, Ic：5V @ 60mA, 300mA
Current - Collector Cutoff (Max)：10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：10 @ 100mA, 5V
Power - Max：1.8 W
Frequency - Transition：5MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220AB
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SD1527-E

2SD1527-E

Single Bipolar Transistors Overview

The Renesas 2SD1527-E is an NPN silicon bipolar junction transistor designed for high-voltage switching applications. It features a collector-emitter voltage rating of 1000V and a continuous collector current of 500mA. The device operates with a transition frequency of 5MHz and dissipates up to 1.8W of power. Packaged in the TO-220AB through-hole format, it provides robust performance for industrial and automotive circuits requiring reliable high-voltage control.

Single Bipolar Transistors Feature Summary

High voltage capability suitable for demanding switching environments
Through-hole mounting for secure mechanical integration
Silicon construction ensuring thermal stability

Single Bipolar Transistors Applications

High-voltage switching circuits
Industrial power control systems
Automotive electronics requiring robust discrete transistors

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'E' against the manufacturer's latest datasheet to confirm compliance with current environmental standards and pinout configurations. Ensure that the TO-220AB package dimensions match the target PCB footprint requirements before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when a single NPN transistor must handle 1000V blocking voltages in a through-hole assembly. Consider the 500mA current limit and 1.8W thermal dissipation constraints relative to the expected load conditions and ambient temperature environment.

Single Bipolar Transistors Part Context

This part belongs to Renesas' portfolio of bipolar power transistors. It serves as a discrete solution for high-voltage applications where integrated circuits may not provide sufficient isolation or voltage handling capabilities, complementing the company's broader semiconductor offerings.

Single Bipolar Transistors Replacement Considerations

Consult official cross-reference documentation for verified substitutes. Generic replacements may differ in breakdown voltage or thermal characteristics; ensure any alternative matches the 1000V rating and TO-220AB form factor.