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The 2SD316EI12NPSA1 is a power driver module from Infineon Technologies designed for high-voltage applications. It features a peak output current of 6 A source and 6.5 A sink, with a typical on-resistance of 0.9 Ω for the high side and 0.5 Ω for the low side. The device supports a voltage rating of 2300 V and operates within an input Vcc range of 3 V to 17 V. Propagation delays are specified at 40 ns for both turn-on and turn-off. The thermal resistance (RthJA) is 129 K/W, and it includes a 12 V UVLO threshold.
Verify the exact part number suffix against official Infineon documentation to ensure correct configuration. Confirm that the UL certification status meets specific regional safety requirements for your application. Check for any recent updates to the datasheet version or compliance reports before finalizing procurement specifications.
Select this module when a single-channel isolated gate driver with high voltage capability is required. Consider the 2300 V rating and 6.5 A sink current for driving large SiC MOSFETs or IGBTs. Ensure the PCB layout accommodates the specific package dimensions and thermal management needs associated with the RthJA value.
This component belongs to Infineon's power driver module lineup, distinct from their discrete ICs like the 1ED314x series. It integrates the driver circuitry into a module form factor, suitable for robust industrial environments. It complements Infineon's broader portfolio of silicon and silicon-carbide based power semiconductors.
Public confirmed substitute part numbers are not available in the provided documentation. Consult official Infineon resources for potential cross-references or newer generation modules with similar electrical characteristics.