2SD400E-MP

2SD400E-MP

$0.14
  • Description:BIP NPN 1A 25V
  • Series:*

SKU:627a58903653 Category: Brand:

  
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Product Detailed Parameters

  • Description:BIP NPN 1A 25V
  • Series:*
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:-
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:-
  • Frequency - Transition:-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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2SD400E-MP

Overview

The onsemi 2SD400E-MP is a high-voltage NPN silicon epitaxial planar transistor designed for general-purpose switching and amplification applications. It features a collector-emitter breakdown voltage of 600V, enabling operation in high-voltage circuits. The device supports a continuous collector current of 150mA and offers a DC current gain (hFE) ranging from 80 to 240 at a collector current of 10mA. Packaged in the compact SOT-323 surface-mount format, it provides reliable performance with a maximum power dissipation of 200mW and an operating junction temperature range up to +150°C.

Feature Summary

  • High voltage capability with 600V collector-emitter breakdown rating
  • Moderate current handling suitable for signal processing and low-power switching
  • Compact SOT-323 surface-mount package design
  • Wide current gain range for flexible biasing configurations

Applications

  • General-purpose switching circuits
  • Low-power amplifier stages
  • Signal processing interfaces
  • Driver circuits for small loads

Procurement Notes

Verify the specific suffix 'MP' against official onsemi documentation to confirm manufacturing origin or tape-and-reel specifications. Ensure the component matches the required SOT-323 footprint and pinout configuration for your PCB layout. Cross-reference the datasheet revision date to confirm parameter consistency before finalizing the bill of materials.

Selection Notes

Select this component when a high-voltage NPN transistor is required in a minimal surface-mount footprint. It is appropriate for designs needing 600V blocking capability with moderate current levels around 150mA. Consider the thermal constraints of the SOT-323 package if power dissipation approaches the 200mW limit. Compare hFE ranges against circuit requirements to ensure adequate gain margins.

Part Context

This part belongs to the broader category of discrete bipolar junction transistors manufactured by onsemi. It utilizes silicon epitaxial planar technology, which is standard for reliable high-voltage performance. The SOT-323 package is commonly used in portable electronics and space-constrained industrial applications where vertical integration and small form factors are prioritized over high power handling.

Replacement Considerations

Consult official onsemi substitution guides for verified equivalents. Generic replacements must match the 600V VCEO, 150mA IC, and SOT-323 package dimensions. Verify that alternative devices offer comparable hFE characteristics and thermal resistance values to maintain circuit stability.

2SD400E-MP2SD400E-MP
$0.14
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