2SJ360(TE12L,F)

$0.37

Description：MOSFET P-CH 60V 1A PW-MINI
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)

SKU:72237b7cfee7 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 60V 1A PW-MINI
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：730mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：6.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：155 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PW-MINI
Package / Case：TO-243AA

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2SJ360(TE12L,F)

Overview

The Toshiba Semiconductor and Storage 2SJ360(TE12L,F) is a silicon P-channel MOS field-effect transistor utilizing L²-π-MOSV technology. It features a drain-source voltage rating of -60 V, a continuous DC drain current of -1 A, and a pulse drain current of -4 A. The device provides a typical drain-source ON resistance of 0.55 Ω at a gate-source voltage of -4 V. It operates within a channel temperature range up to 150 °C and includes thermal protection characteristics with a maximum power dissipation of 1.5 W on a ceramic substrate.

Feature Summary

Utilizes L²-π-MOSV technology for high-speed switching performance
Features low drain-source ON resistance for efficient conduction
Supports 4-V gate drive operation for simplified control
Includes built-in electrostatic discharge sensitivity precautions

Applications

Chopper Regulator circuits
DC-DC Converter designs
Motor Drive systems

Procurement Notes

Verify the specific ordering suffix (TE12L,F) against the manufacturer's official datasheet to confirm package type and environmental compliance status. Confirm RoHS compatibility directly with Toshiba sales representatives as indicated in the documentation. Ensure design parameters remain within absolute maximum ratings to maintain reliability standards.

Selection Notes

Select this component for applications requiring a P-channel MOSFET with a -60 V breakdown voltage and moderate current handling capabilities. Consider the thermal resistance characteristics when designing heat dissipation strategies. Verify that the required gate drive voltage aligns with the specified threshold and ON resistance test conditions for optimal performance.

Part Context

This part belongs to the Toshiba Silicon P-Channel MOS Type series manufactured using L²-π-MOSV technology. It is designed specifically for general electronics applications including portable equipment and industrial controls. The device is housed in a JEITA SC-62 compatible package suitable for surface-mount assembly.