2SJ380(F)

$1.28

Description：MOSFET P-CH 100V 12A TO220NIS
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tube

SKU:6cb4b14328ca Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 100V 12A TO220NIS
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tube
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：210mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：48 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1100 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：35W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220NIS
Package / Case：TO-220-3 Full Pack

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2SJ380(F)

Overview

The Toshiba Semiconductor and Storage 2SJ380(F) is a silicon P-channel MOS field-effect transistor utilizing L2-π-MOSV technology. It features a drain-source voltage rating of -100 V and a continuous DC drain current of -12 A. The device exhibits a typical drain-source ON resistance (RDS(ON)) of 0.15 Ω at VGS = -4 V and ID = -6 A, with a maximum of 0.21 Ω at VGS = -10 V. Forward transfer admittance (|Yfs|) reaches 7.7 S typically. Gate threshold voltage ranges from -0.8 V to -2.0 V. Total gate charge is 48 nC. Thermal resistance from channel to case is 3.57 °C/W.

Feature Summary

Supports 4-V gate drive operation for low-voltage logic compatibility
Provides high forward transfer admittance for efficient switching performance
Features low drain-source ON resistance to minimize conduction losses
Designed for relay drive, DC-DC converter, and motor drive applications

Applications

Relay Drive
DC-DC Converter
Motor Drive

Procurement Notes

Verify the specific ordering suffix associated with the requested model number against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm package type JEDEC SC-67 or JEITA SC-67 matches design requirements. Review the latest datasheet for any updates to absolute maximum ratings or thermal characteristics before finalizing procurement specifications.

Selection Notes

Select this component based on its -100 V breakdown voltage and -12 A continuous current capability. Ensure the application requires a P-channel enhancement mode device with a gate threshold voltage between -0.8 V and -2.0 V. Consider the 0.15 Ω typical RDS(ON) for power dissipation calculations. Verify that the required switching speed and gate charge characteristics align with the driver circuit capabilities.

Part Context

This part belongs to the family of silicon P-channel MOSFETs manufactured by Toshiba Semiconductor and Storage. It utilizes L2-π-MOSV technology to achieve low ON resistance and high reliability. The device is designed for general electronics applications including computers, office equipment, and industrial robots, provided it is not used in unintended high-reliability safety systems.