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Product Detailed Parameters
- Description：MOSFET P-CH TO220NIS
- Series：-
- Mfr：Toshiba Semiconductor and Storage
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：5A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220NIS
- Package / Case：TO-220-3 Full Pack
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Overview
The Toshiba 2SJ438 is a silicon P-channel MOSFET utilizing L²-π-MOSV technology. It features a drain-source voltage rating of -60 V and a continuous DC drain current of -5 A. The device exhibits a typical drain-source ON resistance of 0.16 Ω at VGS = -10 V, with a maximum gate threshold voltage range of -0.8 to -2.0 V. Key electrical characteristics include a forward transfer admittance of 4.0 S and a total gate charge of 22 nC. Thermal performance includes a channel-to-case thermal resistance of 5.0 °C/W.
Feature Summary
- Supports 4-V gate drive for low-voltage logic compatibility
- Features low drain-source ON resistance for efficient power switching
- Incorporates high forward transfer admittance for improved gain
- Designed with low leakage current specifications
Applications
- DC-DC converter circuits
- Relay drive systems
- Motor drive applications
Procurement Notes
Verify the specific ordering suffix against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm package markings and lot number formatting requirements before procurement. Ensure design parameters align with absolute maximum ratings to maintain reliability under heavy loads.
Selection Notes
Select this component for general electronics applications requiring P-channel switching capabilities. Evaluate thermal management strategies based on the specified thermal resistance values. Verify that operating conditions remain within the defined absolute maximum ratings to ensure long-term device stability and prevent reliability degradation.
Part Context
This component belongs to the Toshiba Field Effect Transistor series employing Silicon P Channel MOS Type technology. It is designed for surface mount applications in standard commercial environments. The device utilizes a JEDEC SC-67 compatible package configuration suitable for automated assembly processes.
Replacement Considerations
Consult official Toshiba resources for verified substitute part numbers. Cross-reference technical specifications carefully when evaluating alternative components from other manufacturers.
