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Product Detailed Parameters
- Description：P-CHANNEL SMALL SIGNAL MOSFET
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
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Overview
The onsemi 2SJ645-E is a P-Channel RF MOSFET transistor designed for small-signal field-effect applications. It operates as a discrete semiconductor device within the company's portfolio of power and sensing technologies. The component functions as a single FET, providing switching capabilities for electronic circuits. It is categorized under standard products and discrete devices, supporting various industrial and consumer electronics designs requiring reliable P-channel performance.
Feature Summary
- Functions as a P-Channel MOSFET for small-signal applications
- Designed as a discrete single FET component
- Supports general-purpose switching in electronic circuits
Applications
- Small-signal field-effect transistor circuits
- General-purpose switching applications
- Electronic circuit design requiring P-channel MOSFETs
Procurement Notes
Verify the specific datasheet documentation for the 2SJ645-E to confirm detailed electrical characteristics and mechanical dimensions. Ensure compatibility with target circuit requirements by reviewing official onsemi specifications. Confirm package type and pinout configuration before integration into final designs. Cross-reference ordering information with authorized distributors to ensure authenticity and traceability of the component.
Selection Notes
Select the 2SJ645-E for designs requiring a P-Channel MOSFET for small-signal operations. Evaluate its suitability against specific voltage and current requirements defined in the official datasheet. Consider its role within the broader onsemi discrete device portfolio when designing systems that benefit from standardized, reliable semiconductor components for switching functions.
Part Context
The 2SJ645-E belongs to onsemi's range of intelligent power and sensing technologies, specifically within the discrete devices and power modules category. It represents part of the company's commitment to providing robust semiconductor solutions for diverse market segments including industrial and consumer electronics. The component supports the company's strategy of delivering scalable performance for mission-critical power systems.
Replacement Considerations
Consult official onsemi documentation or authorized distributors for verified substitute part numbers. Do not assume cross-compatibility with other P-Channel MOSFETs without verifying electrical parameters and pin configurations against the 2SJ645-E datasheet.
