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Product Detailed Parameters
- Description：MOSFET
- Series：*
- Mfr：onsemi
- Package：Bulk
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Download product information
Overview
The onsemi 2SJ655-MG5 is a P-channel MOSFET from the 2SJ655 series, designed as a general-purpose switching device. It features low ON-resistance and supports 4V drive levels for efficient operation. The component offers ultrahigh-speed switching capabilities and includes avalanche resistance guarantees, ensuring robust performance in demanding environments.
Feature Summary
- Low ON-resistance for improved efficiency
- Ultrahigh-speed switching capability
- Avalanche resistance guarantee
Applications
- Motor drive systems
- DC/DC converters
Procurement Notes
Verify the manufacturer origin, as the 2SJ655 series originated with Sanyo Semicon Device before being acquired by onsemi. Confirm that the specific MG5 suffix corresponds to the requested packaging or tape-and-reel configuration. Ensure the datasheet aligns with the current onsemi product line documentation to avoid discrepancies with legacy specifications.
Selection Notes
Select this component for applications requiring fast switching speeds and reliable performance under inductive loads. The 4V drive compatibility makes it suitable for logic-level control interfaces. Consider the avalanche rating if the circuit experiences voltage spikes or transient overvoltages during switching operations.
Part Context
This part belongs to the 2SJ655 family of P-channel MOSFETs. Originally developed by Sanyo Semicon Device, the technology and product line were integrated into onsemi following corporate acquisitions. The device remains a standard solution for general-purpose power switching tasks.
Replacement Considerations
Direct substitutes may include other P-channel MOSFETs with similar low ON-resistance and high-speed switching characteristics. Verify pinout compatibility and thermal performance when considering alternatives from different manufacturers.
