2SJ668(TE16L1,NQ)

2SJ668(TE16L1,NQ)

  • Description:MOSFET P-CHANNEL 60V 5A PW-MOLD
  • Series:U-MOSIII
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR)

SKU:dc927113fb4d Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET P-CHANNEL 60V 5A PW-MOLD
  • Series:U-MOSIII
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:170mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id:2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):20W (Tc)
  • Operating Temperature:150°C
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PW-MOLD
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

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2SJ668(TE16L1,NQ)

Overview

The Toshiba 2SJ668(TE16L1,NQ) is a P-Channel Silicon MOSFET utilizing U-MOSIII technology. It features a drain-source voltage of -60 V and a continuous DC drain current of -5 A, with a pulse rating of -20 A. The device exhibits a typical drain-source ON-resistance of 0.12 Ω at VGS = -4 V and ID = -2.5 A. It operates within a channel temperature range up to 150 °C and includes an internal body diode with a reverse recovery time of 40 ns.

Feature Summary

  • U-MOSIII silicon process technology for enhanced performance
  • Capable of 4 V gate drive operation
  • High forward transfer admittance for efficient switching
  • Low leakage current characteristics

Applications

  • Relay Drive circuits
  • DC/DC Converter systems
  • Motor Drive applications

Procurement Notes

Verify the specific ordering suffix TE16L1,NQ against the manufacturer's current datasheet to confirm package dimensions and marking details. Ensure compliance with environmental directives such as RoHS by checking the lot number markings on the component. Confirm that the absolute maximum ratings are not exceeded during system design to maintain reliability.

Selection Notes

Select this component for designs requiring low ON-resistance and high forward transfer admittance in power switching applications. Consider the thermal resistance from channel to case when designing heat dissipation strategies. Verify that the required gate drive voltage aligns with the specified threshold and ON-resistance test conditions for optimal efficiency.

Part Context

This part belongs to the 2SJ668 series of P-Channel Field Effect Transistors manufactured by Toshiba Semiconductor and Storage. The series utilizes U-MOSIII technology to achieve superior electrical characteristics compared to standard MOS types. It is designed specifically for general electronics applications including industrial equipment and consumer appliances.

Replacement Considerations

Consult official Toshiba documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying pinout, voltage ratings, and thermal characteristics.

2SJ668(TE16L1,NQ)2SJ668(TE16L1,NQ)

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