2SJ684-TL-E

$1.82

Description：MOSFET P-CH
Series：*
Mfr：Sanyo
Package：Bulk

SKU:080d32ea992d Category: Single FETs, MOSFETs Brand: Sanyo

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH
Series：*
Mfr：Sanyo
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SJ684-TL-E

Overview

The Sanyo 2SJ684-TL-E is a P-Channel Silicon MOSFET designed for general-purpose switching applications. It features a single-element configuration with an integrated body diode. Key electrical parameters include a drain-to-source voltage of 100V, a continuous drain current of 17A, and a maximum on-resistance of 0.193 ohms. The device supports 4V drive levels and guarantees avalanche energy resistance. It is housed in a small outline package with three pins.

Feature Summary

General-purpose switching capability
Ultrahigh-speed switching performance
Low on-resistance design
Guaranteed avalanche resistance

Applications

Motor drive systems
DC/DC converters

Procurement Notes

Verify the specific ordering number EN8589 against the component marking to ensure authenticity. Confirm that the datasheet references align with the manufacturer's official documentation for the 2SJ664 series, as cross-referencing part numbers is critical for this family. Ensure the package type matches the required PCB footprint specifications before procurement.

Selection Notes

Select this component for circuits requiring efficient P-Channel switching with low conduction losses. The 4V drive compatibility makes it suitable for logic-level control interfaces. Consider the avalanche energy rating for inductive load protection requirements. Verify thermal management needs based on the specified allowable power dissipation and channel temperature limits.

Part Context

This component belongs to the Sanyo P-Channel Silicon MOSFET family, specifically engineered for general-purpose switching devices. It shares characteristics with similar models like the 2SJ664-TL, offering robust performance in power management applications. The device utilizes metal-oxide semiconductor technology for enhanced switching speeds and efficiency.