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Product Detailed Parameters
- Description：MOSFET N-CH 50V 50MA SMINI3-G1
- Series：-
- Mfr：Panasonic Electronic Components
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：50 V
- Current - Continuous Drain (Id) @ 25°C：50mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V
- Rds On (Max) @ Id, Vgs：50Ohm @ 10mA, 2.5V
- Vgs(th) (Max) @ Id：1.1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：10V
- Input Capacitance (Ciss) (Max) @ Vds：4.5 pF @ 5 V
- FET Feature：-
- Power Dissipation (Max)：150mW (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SMini3-G1
- Package / Case：SC-70, SOT-323
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Overview
The Panasonic 2SK137400L is a silicon N-channel MOSFET designed for switching circuits. It features high-speed switching capabilities and supports 2.5 V drive voltages. The device incorporates a built-in gate protection diode and operates within a wide frequency band. Key electrical parameters include a drain-source voltage of 50 V, a continuous drain current of 50 mA, and a power dissipation rating of 150 mW at 25°C ambient temperature.
Feature Summary
- High-speed switching performance suitable for wide frequency bands
- Built-in gate protection diode for enhanced circuit reliability
- Capable of operation with low 2.5 V drive signals
Applications
- General electronic equipment
- Office equipment
- Communications equipment
- Measuring instruments
- Household appliances
Procurement Notes
Verify the exact ordering suffix and package marking symbol (4V) against official documentation before procurement. Confirm that the component meets RoHS Directive compliance requirements. Ensure the design adheres to absolute maximum ratings, particularly regarding thermal characteristics and heat radiation. Consult sales staff for any applications beyond standard general electronics.
Selection Notes
Select this component for low-voltage switching applications requiring fast response times. The 2.5 V drive capability makes it suitable for battery-powered or logic-level interfacing scenarios. Consider the SC-70 SMini3-G1 package size for space-constrained designs. Evaluate the 50 mA drain current limit against peak load requirements to ensure safe operation margins.
Part Context
This part belongs to the Panasonic Silicon MOSFETs (Small Signal) product line. It is specifically engineered for switching circuits where compact size and rapid transition speeds are critical. The device utilizes silicon technology to provide stable performance across standard operating temperatures.
Replacement Considerations
Consult official Panasonic resources for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' small-signal MOSFETs without verifying pinout, voltage ratings, and package dimensions.
FAQ
What is the purpose of the built-in gate protection diode?
The built-in gate protection diode safeguards the gate terminal from potential electrostatic discharge or voltage spikes, enhancing the reliability of the switching circuit.
Can this MOSFET be used in aerospace or life support systems?
No. The datasheet explicitly states that these products are intended for standard applications like office and household equipment. Special applications requiring exceptional quality must be discussed directly with sales staff.
