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Product Detailed Parameters
- Description：SMALL SIGNAL N-CHANNEL MOSFET
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：3Ohm @ 10mA, 10V
- Vgs(th) (Max) @ Id：1.8V @ 1µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：28 pF @ 5 V
- FET Feature：-
- Power Dissipation (Max)：200mW (Ta)
- Operating Temperature：150°C
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SC-59
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The 2SK1582-T1B-A is an N-channel Power MOSFET designed for automotive applications. It features a drain-source voltage of 30 V and a continuous drain current of 200 mA at ambient temperature. The device has a maximum power dissipation of 200 mW at Ta. It is housed in a surface-mount SC-59 package with dimensions of 3 x 3 x 1.4 mm. Key electrical parameters include a maximum on-resistance of 3000 mΩ at 10 V gate drive and 5000 mΩ at 4.5 V gate drive.
Feature Summary
- N-channel configuration optimized for switching operations
- Automotive qualification level for industrial reliability
- Compact SC-59 surface mount package design
Applications
- Automotive electronic circuits
- Industrial switching applications
Procurement Notes
Verify the obsolete status of this component before initiating any procurement process. Confirm that the specific Renesas datasheet D13557EJ4V0DS00 matches the required specifications for your design. Ensure compatibility with existing PCB layouts, as recommended mounting pad dimensions are provided in official documentation. Check for available substitute parts if new production is required.
Selection Notes
Select this component for low-voltage, low-current automotive switching tasks where space is constrained. The SC-59 package suits high-density designs. Evaluate the high on-resistance values to ensure they meet thermal and efficiency requirements for the specific load conditions. Consider the 30 V rating relative to the system's operating voltage to maintain adequate safety margins.
Part Context
This part belongs to Renesas' Power MOSFETs for Automotive series. It is manufactured by Renesas Electronics Corporation, continuing the lineage from NEC technology. The component is classified under standard quality grade unless otherwise specified in data sheets. It serves as a discrete switching element within larger automotive or industrial power management systems.
Replacement Considerations
The component is listed as obsolete. No public confirmed substitute part numbers are available in the provided source material. Designers should consult official Renesas resources for migration paths or equivalent alternatives.
