2SK1947-E

$20.05

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk

SKU:6f95a38bb7a0 Category: Single FETs, MOSFETs Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：N-CHANNEL POWER MOSFET
Series：*
Mfr：Renesas Electronics Corporation
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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2SK1947-E

Overview

The 2SK1947-E is an N-channel power MOSFET manufactured by Renesas Electronics Corporation. It utilizes silicon as the semiconductor material and features a single channel configuration with three leads. The device incorporates a built-in fast recovery diode with a reverse recovery time of 140 ns. Key electrical characteristics include a typical input capacitance (Ciss) of 5810 pF. Designed for industrial and consumer applications, it supports switching regulator functions.

Feature Summary

Low on-resistance for efficient power handling
High speed switching capability
Low drive current requirements
Built-in fast recovery diode

Applications

Switching regulators
Industrial equipment power stages
Consumer electronics power management

Procurement Notes

Verify the specific datasheet version directly with Renesas Electronics sales offices before purchasing or integrating this component into designs. Confirm that the package type and pinout match your PCB layout requirements. Ensure compliance with RoHS standards as indicated in product listings. Cross-reference part numbers to avoid confusion with similar models in the series.

Selection Notes

Select this component when low on-resistance and high-speed switching are critical for efficiency. The integrated fast recovery diode simplifies circuit design for synchronous rectification or freewheeling applications. Consider thermal performance and package derivatives if operating in high-power environments. Verify input capacitance values against gate drive capabilities.

Part Context

This part belongs to Renesas' portfolio of silicon N-channel MOSFETs. It is often compared with other automotive and industrial power MOSFETs regarding thermal performance in packages like TOLL. The product line emphasizes reliability for both industrial and consumer sectors, supporting modern power conversion architectures.

Replacement Considerations

Consult official substitution lists from Renesas for verified equivalents. Generic replacements may not match the specific 140 ns diode recovery time or 5810 pF capacitance. Ensure any substitute maintains the same voltage and current ratings for safe operation.