2SK2145-GR(TE85L,F

Overview

The Toshiba 2SK2145-GR(TE85L,F) is a silicon N-channel junction field-effect transistor designed for audio frequency low noise amplifier applications. It integrates two devices within an SM5 (super mini type with 5 leads) package. Key electrical characteristics include a typical forward transfer admittance of 15 mS at VDS = 10 V and VGS = 0, and a high breakdown voltage of VGDS = −50 V. The device exhibits a typical noise figure of 1.0 dB under specified conditions. Absolute maximum ratings specify a total drain power dissipation of 300 mW and a junction temperature limit of 125 °C.

Feature Summary

• Integrates two independent N-channel JFETs in a compact SM5 package
• Optimized for low noise performance in audio frequency circuits
• Features high gate-drain breakdown voltage capability
• Provides high input impedance with minimal gate leakage current

Applications

• Audio frequency low noise amplifier circuits
• High fidelity audio pre-amplifier stages
• Low noise signal conditioning modules

Procurement Notes

Verify the specific ordering suffix TE85L,F against official Toshiba Semiconductor and Storage documentation to confirm packaging and reel specifications. Ensure compliance with RoHS directives and intended use restrictions outlined in the datasheet. Confirm that the GR classification matches the required drain current range for the target application design.

Selection Notes

Select this component when dual matched JFETs are required in a minimal footprint for audio applications. Consider the 300 mW total power dissipation limit and the need for appropriate thermal management. Evaluate the 15 mS transconductance and 1.0 dB noise figure against circuit requirements. Verify compatibility with standard surface mount assembly processes for the SM5 package.

Part Context

This part belongs to the Toshiba 2SK2145 series of silicon N-channel junction field-effect transistors. The series is specifically engineered for audio frequency applications requiring low noise characteristics. The 2SK2145 variant consolidates two devices into a single small outline package, facilitating space-constrained designs while maintaining high performance metrics for signal amplification.

Replacement Considerations

Consult official Toshiba Semiconductor and Storage documentation for verified substitute part numbers. Cross-referencing should be performed using comprehensive parameter matching including package type, electrical characteristics, and pinout configuration to ensure functional equivalence.